Severity: Warning
Message: file_get_contents(https://...@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 176
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 176
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 250
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3122
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 575
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 489
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
All-inorganic perovskite nanomaterials have attracted much attention recently due to their prominent optical performance and potential application for optoelectronic devices. The carriers dynamics of all-inorganic perovskites has been the research focus because the understanding of carriers dynamics process is of critical importance for improving the fluorescence conversion efficiency. While photophysical properties of excited carrier are usually measured at the macroscopic scale, it is necessary to probe the in-situ dynamics process at the nanometer scale and gain deep insights into the photophysical mechanisms and their localized dependence on the thin-film nanostructures. Stimulated emission depletion (STED) nanoscopy with super-resolution beyond the diffraction limit can directly provide explicit information at a single particle level or nanometer scale. Through this unique technique, we firstly study the in-situ dynamics process of single CsPbBr nanocrystals(NCs) and nanostructures embedded inside high-dense samples. Our findings reveal the different physical mechanisms of PL blinking and antibunching for single CsPbBr NCs and nanostructures that correlate with thin-film nanostructural features (e.g. defects, grain boundaries and carrier mobility). The insights gained into such nanostructure-localized physical mechanisms are critically important for further improving the material quality and its corresponding device performance.
Download full-text PDF |
Source |
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http://dx.doi.org/10.1364/OE.442345 | DOI Listing |
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