We demonstrate a method that allows a high-efficiency single-photon-avalanche diode (SPAD) with a thick absorption region (> 10 μm) to count single photons at rates significantly higher than previously demonstrated. We apply large (> 30 V) AC bias gates to the SPAD at 1 GHz and detect minute avalanches with a discrimination threshold of 5(1) mV by means of radio-frequency (RF) interferometry. We measure a reduction by a factor of ≈ 500 in the average charge per avalanche when compared to operation in its traditional active-quenching module, and a relative increase of >19 % in detection efficiency at 850 nm. The reduction in charge strongly suppresses self-heating effects in the diode that can degrade performance at high avalanche rates. We show that the single-photon detection system maintains high efficiency at count rates exceeding 10s.
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http://dx.doi.org/10.1063/5.0041984 | DOI Listing |
An ultra-narrow-linewidth laser is a core device in fields such as optical atomic clocks, quantum communications, and microwave photonic oscillators. This paper reports an ultra-narrow-linewidth self-injection locked semiconductor laser, which is realized through optical feedback from a high-Q (258 million) Fabry-Perot (FP) cavity constructed with three mirrors, generating an output power of 12 mW. Employing a delay self-heterodyne method based on a signal source analyzer, the phase noise of the laser is -129 dBc/Hz at 100 kHz offset frequency, with an intrinsic linewidth of 3 mHz.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China.
Terahertz (THz) polarization detection facilitates the capture of multidimensional data, including intensity, phase, and polarization state, with broad applicability in high-resolution imaging, communication, and remote sensing. However, conventional semiconductor materials are limited by energy band limitations, rendering them unsuitable for THz detection. Overcoming this challenge, the realization of high-stability, room-temperature polarization-sensitive THz photodetectors (PDs) leveraging the thermoelectric effect of Cs(FAMA)Pb(IBr) (CsFAMA)/metasurfaces is presented.
View Article and Find Full Text PDFSci Rep
November 2024
FAST Labs™, BAE Systems, 130 Daniel Webster Hwy., Merrimack, 03054, NH, USA.
Extremely high-Q microresonators provide an attractive platform for a plethora of photonic applications including optical frequency combs, high-precision metrology, telecommunication, microwave generation, narrow linewidth lasers, and stable frequency references. Moreover, the desire for compactness and a low power threshold for nonlinear phenomena have spurred investigation into integrated and scalable solutions. Historically, crystalline microresonators with Q ∼ 10 were one of the first material platforms providing unprecedented optical performance in a small form factor.
View Article and Find Full Text PDFPhotonic analog-to-digital converters (PADCs) have been investigated for nearly five decades as a promising approach to overcome the bandwidth and jitter problem and bring ADC performance to new levels. However, low-amplitude signals often struggle to achieve full-scale quantization accuracy, posing a basic challenge for achieving high signal-to-noise ratio (SNR) digitization. Here, we established an optical carrier-to-sideband ratio (OCSR) based sampler model to achieve the optimal combination of the modulation, loss compensation, and photoelectric detection processes.
View Article and Find Full Text PDFSelf-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to deterministically control the charge state and reduce the charge noise of the QDs.
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