Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material systems. Among these, two-dimensional electron gases (2DEGs) are of particular interest due to their inherent design flexibility and scalability. Here, we discuss results on a 2D platform based on a ternary 2DEG (InSbAs) coupled to in situ grown aluminum. The spin-orbit coupling in these 2DEGs can be tuned with the As concentration, reaching values up to 400 meV Å, thus exceeding typical values measured in its binary constituents. In addition to a large Landé g-factor of ∼55 (comparable to that of InSb), we show that the clean superconductor-semiconductor interface leads to a hard induced superconducting gap. Using this new platform, we demonstrate the basic operation of phase-controllable Josephson junctions, superconducting islands, and quasi-1D systems, prototypical device geometries used to study Majorana zero modes.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acs.nanolett.1c03520DOI Listing

Publication Analysis

Top Keywords

two-dimensional electron
8
electron gases
8
topological superconductivity
8
insbas two-dimensional
4
gases platform
4
platform topological
4
superconductivity topological
4
superconductivity engineered
4
engineered semiconductors
4
semiconductors strong
4

Similar Publications

Graphene Supported NiFe-LDH and PbO Catalysts Prepared by Plasma Process for Oxygen Evolution Reaction.

Materials (Basel)

December 2024

State Key Laboratory of Power Transmission Equipment Technology, School of Electrical Engineering, Chongqing University, Chongqing 400044, China.

The development of efficient catalysts for water electrolysis is crucial for advancing the low-carbon transition and addressing the energy crisis. This work involves the fabrication of graphene-based catalysts for the oxygen evolution reaction (OER) by integrating NiFe-LDH and PbO onto graphene using plasma treatment. The plasma process takes only 30 min.

View Article and Find Full Text PDF

Semiconductor nanomaterials and nanostructured interfaces have important technological applications, ranging from fuel production to electrosynthesis. Their photocatalytic activity is known to be highly heterogeneous, both in an ensemble of nanomaterials and within a single entity. Photoelectrochemical imaging techniques are potentially useful for high-resolution mapping of photo(electro)catalytic active sites; however, the nanoscale spatial resolution required for such experiments has not yet been attained.

View Article and Find Full Text PDF

As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (BiSe) exhibits favorable electrical and optical properties. Here, three distinct morphologies of BiSe were obtained from bulk BiSe through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation.

View Article and Find Full Text PDF

The layer-stacking mode of a two-dimensional (2D) material plays a dominant role either in its topology or properties, but remains challenging to control. Herein, we developed alkali-metal ion-regulating synthetic control on the stacking structure of a vinylene-linked covalent triazine framework (termed spc-CTF) for improving hydrogen peroxide (HO) photoproduction. Upon the catalysis of EtONa in Knoevenagel polycondensation, a typical eclipsed stacking mode (spc-CTF-4@AA) was built, while a staggered one (spc-CTF-4@AB) was constructed using LiOH.

View Article and Find Full Text PDF

Spin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled FeGaTe/CrSBr Magnetic van der Waals Heterostructure.

ACS Nano

January 2025

Center of Free Electron Laser & High Magnetic Field, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.

Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D FeGaTe (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!