Solution-processable all-inorganic lead halide perovskites are under intensive attention due to their potential applications in low-cost high-performance optoelectronic devices such as photodetectors. However, solution processing usually generates structural and chemical defects which are detrimental to the photodetection performance of photodetectors. Here, a polymer additive of polyethylene glycol (PEG) was employed to passivate the localized defects in CsPbIBr films through the Lewis acid-base interaction. The interfacial defects were passivated efficiently by introducing a trace amount of a PEG additive with a concentration of 0.4 mg mL into the CsPbIBr precursor solution, as suggested by the significantly reduced trap density of state, which was revealed using thermal admittance spectroscopy. Fourier transform infrared spectrum characterization showed that rather than Cs or I, a Lewis acid-base interaction was established between Pb and PEG to passivate the defects in the CsPbIBr perovskite, which leads to large suppression of noise current. Both specific detectivity and linear dynamic range improved from 4.1 × 10 Jones and 73 dB to 2.2 × 10 Jones and 116 dB, respectively. Our work demonstrates the feasibility of employing an environmentally stable polymeric additive PEG to passivate defects for high photodetection performance in all-inorganic perovskite photodetectors.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acsami.1c19323 | DOI Listing |
Adv Sci (Weinh)
January 2025
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
The integration of mid-infrared (MIR) photodetectors with built-in encryption capabilities holds immense promise for advancing secure communications in decentralized networks and compact sensing systems. However, achieving high sensitivity, self-powered operation, and reliable performance at room temperature within a miniaturized form factor remains a formidable challenge, largely due to constraints in MIR light absorption and the intricacies of embedding encryption at the device level. Here, a novel on-chip metamaterial-enhanced, 2D tantalum nickel selenide (Ta₂NiSe₅)-based photodetector, meticulously designed with a custom-engineered plasmonic resonance microstructure to achieve self-powered photodetection in the nanoampere range is unveiled.
View Article and Find Full Text PDFSmall
January 2025
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China.
The properties and device applications of 2D semiconductors are highly sensitive to intrinsic structural defects due to their ultrathin nature. CuInSe (CIS) materials own excellent optoelectronic properties and ordered copper vacancies, making them widely applicable in photovoltaic and photodetection fields. However, the synthesis of 2D CIS nanoflakes remains challenging due to the nonlayered structure, multielement composition, and the competitive growth of various by-products, which further hinders the exploration of vacancy-related optoelectronic devices.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Physics, Jadavpur University, Kolkata 700032, India.
Self-powered broadband photodetectors (SPBPDs) hold great potential for next-generation optoelectronic applications, but their performance is often limited by interface defects that impair charge transport and increase recombination losses. In this work, we report the enhancement of the photodetection efficiency of SPBPDs by partially substituting copper (Cu) with silver (Ag) in kesterite CuZnSnS (ACZTS) thin films. Varying Ag concentrations (0%, 2%, 4%, 6%) are incorporated into the CZTS layer, forming a TiO/ACZTS heterojunction in superstrate configuration fabricated via a low-cost sol-gel spin-coating technique with low-temperature open air annealing avoiding conventional postdeposition sulfurization or selenization.
View Article and Find Full Text PDFSensors (Basel)
December 2024
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
The combination of ZnO with narrow bandgap materials such as CuO is now a common method to synthesize high-performance optoelectronic devices. This study focuses on optimizing the performance of p-CuO/n-ZnO heterojunction pyroelectric photodetectors, fabricated through magnetron sputtering, by leveraging the pyro-phototronic effect. The devices' photoresponse to UV (365 nm) and visible (405 nm) lasers is thoroughly examined.
View Article and Find Full Text PDFNatl Sci Rev
January 2025
State Key Laboratory of Elemento-Organic Chemistry, Frontiers Science Center for New Organic Matter, The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, Renewable Energy Conversion and Storage Center (RECAST), Tianjin Key Laboratory of Functional Polymer Materials, Nankai University, Tianjin 300071, China.
It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!