Effect of Ligands and Solvents on the Stability of Electron Charged CdSe Colloidal Quantum Dots.

J Phys Chem C Nanomater Interfaces

Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

Published: November 2021

Many colloidal quantum dot (QD)-based devices involve charging of the QD, either via intentional electronic doping or via electrical charge injection or photoexcitation. Previous research has shown that this charging can give rise to undesirable electrochemical surface reactions, leading to the formation of localized in-gap states. However, little is known about the factors that influence the stability of charged QDs against surface oxidation or reduction. Here, we use density functional theory to investigate the effect of various ligands and solvents on the reduction of surface Cd in negatively charged CdSe QDs. We find that X-type ligands can lead to significant shifts in the energy of the band edges but that the in-gap state related to reduced surface Cd is shifted in the same direction. As a result, shifting the band edges to higher energies does not necessarily lead to less stable electron charging. However, subtle changes in the local electrostatic environment lead to a clear correlation between the position of the in-gap state in the bandgap and the energy gained upon surface reduction. Binding ligands directly to the Cd sites most prone to reduction was found to greatly enhance the stability of the electron charged QDs. We find that ligands bind much more weakly after reduction of the Cd site, leading to a loss in binding energy that makes charge localization no longer energetically favorable. Lastly, we show that increasing the polarity of the solvent also increases the stability of QDs charged with electrons. These results highlight the complexity of surface reduction reactions in QDs and provide valuable strategies for improving the stability of charged QDs.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8573769PMC
http://dx.doi.org/10.1021/acs.jpcc.1c07464DOI Listing

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