In this Letter we report an experiment that verifies an atomic-ensemble quantum memory via a measurement-device-independent scheme. A single photon generated via Rydberg blockade in one atomic ensemble is stored in another atomic ensemble via electromagnetically induced transparency. After storage for a long duration, this photon is retrieved and interfered with a second photon to perform a joint Bell-state measurement (BSM). The quantum state for each photon is chosen based on a quantum random number generator, respectively, in each run. By evaluating correlations between the random states and BSM results, we certify that our memory is genuinely entanglement preserving.
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http://dx.doi.org/10.1103/PhysRevLett.127.160502 | DOI Listing |
Nat Commun
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
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December 2024
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS.
View Article and Find Full Text PDFACS Cent Sci
December 2024
Division of Chemistry and Chemical Engineering, Arthur Amos Noyes Laboratory of Chemical Physics, California Institute of Technology, Pasadena, California 91125, United States.
Spin-lattice relaxation constitutes a key challenge for the development of quantum technologies, as it destroys superpositions in molecular quantum bits (qubits) and magnetic memory in single molecule magnets (SMMs). Gaining mechanistic insight into the spin relaxation process has proven challenging owing to a lack of spectroscopic observables and contradictions among theoretical models. Here, we use pulse electron paramagnetic resonance (EPR) to profile changes in spin relaxation rates ( ) as a function of both temperature and magnetic field orientation, forming a two-dimensional data matrix.
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December 2024
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China.
Although MoSe-based photodetectors have achieved excellent performance, the ultrafast photoresponse has limited their application as an optoelectronic synapse. In this paper, the enhancement of the rhodamine 6G molecule on the memory time of MoSe is reported. It is found that the memory time of monolayer MoSe can be obviously enhanced after assembly with rhodamine 6G exhibiting synaptic characteristics in comparison to pristine MoSe.
View Article and Find Full Text PDFNano Lett
December 2024
Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China.
We report deterministic operations on single dipolar skyrmions confined in nanostructured cuboids by using in-plane currents. We achieve highly reversible writing and deleting of skyrmions in a simple cuboid without any artificial defects or pinning sites. The current-induced creation of skyrmions is well-understood through the spin-transfer torque acting on surface spin twists of the spontaneous 3D ferromagnetic state, caused by the magnetic dipole-dipole interaction of the uniaxial FeSn magnet with a low-quality factor.
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