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Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices. | LitMetric

AI Article Synopsis

  • Semiconductor quantum registers need quantum dots (QDs) that can be accurately placed and independently controlled by external electrodes for optimal performance.
  • Research has shown successful implementation of silicon-based QD qubits, but there’s a shift towards using germanium (Ge) QDs due to their potential for higher operating temperatures and easier fabrication processes.
  • The novel approach involves using self-assembled growth techniques alongside lithographic patterning to create scalable, tunable spherical Ge QDs, enabling precise placement and close coupling, which enhances the design possibilities for advanced quantum electronic devices.

Article Abstract

Semiconductor-based quantum registers require scalable quantum-dots (QDs) to be accurately located in close proximity to and independently addressable by external electrodes. Si-based QD qubits have been realized in various lithographically-defined Si/SiGe heterostructures and validated only for milli-Kelvin temperature operation. QD qubits have recently been explored in germanium (Ge) materials systems that are envisaged to operate at higher temperatures, relax lithographic-fabrication requirements, and scale up to large quantum systems. We report the unique scalability and tunability of Ge spherical-shaped QDs that are controllably located, closely coupled between each another, and self-aligned with control electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at each sidewall corner or included-angle location of SiN/Si-ridges with specially designed fanout structures. Multiple Ge QDs with good tunability in QD sizes and self-aligned electrodes were controllably achieved. Spherical-shaped Ge QDs are closely coupled to each other via coupling barriers of SiN spacer layers/c-Si that are electrically tunable via self-aligned poly-Si or polycide electrodes. Our ability to place size-tunable spherical Ge QDs at any desired location, therefore, offers a large parameter space within which to design novel quantum electronic devices.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541477PMC
http://dx.doi.org/10.3390/nano11102743DOI Listing

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