Modeling and Analysis of a SiC Microstructure-Based Capacitive Micro-Accelerometer.

In this study, a comb-type capacitive accelerometer based on a silicon carbide (SiC) microstructure is presented and investigated by the finite element method (FEM). It has the advantages of low weight, small volume, and low cross-coupling. Compared with silicon(111) accelerometers with the same structure, it has a higher natural frequency. When the accelerometer vibrates, its resistive force consists of two main components: a viscous damping and an elastic damping force. It was found that viscous damping dominates at low frequency, and elastic damping dominates at high frequency. The second-order linear system of the accelerometer was analyzed in the time-frequency domain, and its dynamic characteristics were best when the gap between the capacitive plates was 1.23 μm. The range of this accelerometer was 0-100 g, which is 1.64 times that of a silicon(111) accelerometer with the same structure. In addition, the accelerometer could work normally at temperatures of up to 1200 °C, which is much higher than the working temperatures of silicon devices. Therefore, the proposed accelerometer showed superior performance compared to conventional silicon-based sensors for inertial measurements.