The distinct structure and maximum utilization of metal atoms on supported single-atom catalysts (SACs) represents a new frontier of heterogeneous catalysis, yet the low-cost mass production of high-performance SACs is still a key issue for practical applications. Herein, by coating a formamide-derived highly N-modified carbonaceous layer as a "glue" on commercially available activated carbon black (AC), a hundred-gram scale synthesis of atomically dispersed non-noble metal-nitrogen-carbon (MNC) materials was realized, including but not limited to Fe, Co, Ni, Mn, and Cu. The dispersion and coordination environments of Fe atoms on AC were initially revealed by XRD, HRTEM, and XPS, and further confirmed by HAADF-STEM and XANES analysis, presenting Fe atoms in a Fe-N structure. The atomically dispersed metal species, though relatively low-loading grafted on AC (typical loading of 0.16 to 0.29 at%), are mostly distributed on the electrochemically accessible surface, resulting in improved metal utilization. The FeNC@AC-3 sample exhibited highly comparable catalytic performance to 20 wt% Pt/C for the alkaline oxygen reduction reaction, and superior Al-air battery performance. Our work may inspire the synthesis of other types of SACs for broad electrocatalysis applications at kilogram or even ton scale.
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http://dx.doi.org/10.1039/d1nr05209h | DOI Listing |
Adv Mater
January 2025
Laboratory of Advanced Materials, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China.
Metal single atoms (SA)-support interactions inherently exhibit significant electrochemical activity, demonstrating potential in energy catalysis. However, leveraging these interactions to modulate electronic properties and extend application fields is a formidable challenge, demanding in-depth understanding and quantitative control of atomic-scale interactions. Herein, in situ, off-axis electron holography technique is utilized to directly visualize the interactions between SAs and the graphene surface.
View Article and Find Full Text PDFJ Biomater Appl
January 2025
Department of Prosthetic Dentistry and Stomatognathic Physiology, Institute of Dentistry, University of Turku, Turku, Finland.
his study aimed to evaluate the effects of the atomic layer deposited hydroxyapatite (ALD-HA) coating of the titanium (Ti) surface on human gingival keratinocyte (HGK) cell adhesion, spreading, viability, and hemidesmosome (HD) formation. Grade 2 square-shaped Ti substrates were used ( = 62). Half of the substrates were ALD-HA coated, while the other half were used as non-coated controls (NC).
View Article and Find Full Text PDFLangmuir
January 2025
Department of Physics, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates.
Self-assembled gold nanoparticles (Au-NPs) possess distinctive properties that are highly desirable in diverse nanotechnological applications. This study meticulously explores the size-dependent behavior of Au-NPs under an electric field, specifically focusing on sizes ranging from 5 to 40 nm, and their subsequent assembly into 2D monolayers on an n-type silicon substrate. The primary objective is to refine the assembly process and augment the functional characteristics of the resultant nanostructures.
View Article and Find Full Text PDFNano Lett
January 2025
Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China.
Coulomb attraction with weak screening can trigger spontaneous exciton formation and condensation, resulting in a strongly correlated many-body ground state, namely, the excitonic insulator. One-dimensional (1D) materials natively have ineffective dielectric screening. For the first time, we demonstrate the excitonic instability of single atomic wires of transition metal telluride MTe (M = Mo, W), a family of 1D van der Waals (vdW) materials accessible in the laboratory.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory, Shenzhen 518111, China.
β-GaO is a candidate semiconductor material for high-power electronics due to its ultrawide bandgap and high Baliga's figure of merit. However, its -type doping is extremely difficult because of its low and flat band dispersion at its valence band maximum (VBM). A few reports have predicted that the VBM of β-GaO can be enhanced via alloying a specific metal (M), which enables -type conduction.
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