Zn metal holds grand promise as the anodes of aqueous batteries for grid-scale energy storage. However, the rampant zinc dendrite growth and severe surface side reactions significantly impede the commercial implementation. Herein, a universal Zn-metal oxide Ohmic contact interface model is demonstrated for effectively improving Zn plating/stripping reversibility. The high work function difference between Zn and metal oxides enables the building of an interfacial anti-blocking layer for dendrite-free Zn deposition. Moreover, the metal oxide layer can function as a physical barrier to suppress the pernicious side reactions. Consequently, the proof-of-concept CeO -modified Zn anode delivers ultrastable durability of over 1300 h at 0.5-5 mA cm and improved Coulombic efficiency, the feasibility of which is also evidenced in MoS //Zn full cells. This study enriches the fundamental comprehension of Ohmic contact interfaces on the Zn deposition, which may shed light on the development of other metal battery anodes.
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http://dx.doi.org/10.1002/advs.202102612 | DOI Listing |
Nanoscale Horiz
January 2025
SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
Janus MoSiGeN monolayers exhibit exceptional mechanical stability and high electron mobility, which make them a promising channel candidate for field-effect transistors (FETs). However, the high Schottky barrier at the contact interface would limit the carrier injection efficiency and degrade device performance. Herein, using density functional theory calculations and machine learning methods, we investigated the interfacial properties of the Janus MoSiGeN monolayer and metal electrode contacts.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China.
This study theoretically investigates the defect-related electronic structure and transport properties in a device where a semiconductor bilayer SnS (BL-SnS) serves as the central scattering region and bilayer SnS with cobalt atom intercalation (Co-SnS) as the metallic electrodes. The Co-SnS/BL-SnS junction forms an ohmic contact, which is robust to defects. Low contact resistances of 52.
View Article and Find Full Text PDFACS Nano
January 2025
School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia.
Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Microelectronic Science and Engineering, Ningbo University, Ningbo 315000, China.
Power generation and architectural beauty are equally important for designing efficient and esthetically appealing bifacial perovskite solar cells (PSCs). In this work, efficient and multicolored p-i-n-structured PSCs are achieved by taking advantage of a dielectric/metal/dielectric (DMD)-type (MoO/Ni/Ag/MoO) transparent counter electrode. The MoO/Ni underlayer effectively promotes the formation of a continuous and conductive ultrathin Ag transparent film, especially the 1 nm Ni seed layer adjusts the interface energy level between perovskite/MoO and Ag, resulting in Ohmic contact of the electrode to promote charge extraction and collection.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, National Engineering Research Center of Wide Band-Gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China.
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-GaO-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs) and P-N diodes (PNDs), utilizing Silvaco TCAD simulation software, device fabrication and comparative analysis. From the perspective of transport characteristics, it is observed that the SBD exhibits a lower turn-on voltage and a higher current density. Notably, the V of the Ti/Au anode SBD is merely 0.
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