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http://dx.doi.org/10.1161/CIRCHEARTFAILURE.121.008770 | DOI Listing |
ACS Nano
December 2024
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Negative differential transconductance (NDT) devices have emerged as promising candidates for multivalued logic computing, and particularly for ternary logic systems. To enable computation of any ternary operation, it is essential to have a functionally complete set of ternary logic gates, which remains unrealized with current NDT technologies, posing a critical limitation for higher-level circuit design. Additionally, NDT devices typically rely on heterojunctions, complicating fabrication and impacting reliability due to the introduction of additional materials and interfaces.
View Article and Find Full Text PDFNano Lett
November 2024
Max Planck Institute of Microstructure Physics, 06120 Halle, Germany.
Two-dimensional materials show great potential for future electronics beyond silicon materials. Here, we report an exotic multiple-port device based on multiple electrically tunable planar p-n homojunctions formed in a two-dimensional (2D) ambipolar semiconductor, tungsten diselenide (WSe). In this device, we prepare multiple gates consisting of a global gate and several local gates, by which electrostatically induced holes and electrons are simultaneously accumulated in a WSe channel, and furthermore, at the boundaries, p-n junctions are formed as directly visualized by Kelvin probe force microscopy.
View Article and Find Full Text PDFJ Phys Chem Lett
October 2024
Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties.
View Article and Find Full Text PDFSmall
November 2024
Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China.
With the continuous advancement of wearable technology and advanced medical monitoring, there is an increasing demand for electronic devices that can adapt to complex environments and have high perceptual sensitivity. Here, a novel artificial injury perception device based on an Ag/HfO/ITO/PET flexible memristor is designed to address the limitations of current technologies in multimodal perception and environmental adaptability. The memristor exhibits excellent resistive switching (RS) performance and mechanical flexibility under different bending angles (BAs), temperatures, humid environment, and repetitive folding conditions.
View Article and Find Full Text PDFACS Nano
June 2024
School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
In artificial synaptic devices aimed at mimicking neuromorphic computing systems, electrical or optical pulses, or both, are generally used as stimuli. In this work, we introduce chiral materials for tailoring the characteristics of photonic synaptic devices to achieve handedness-dependent neuromorphic computing and in-memory logic gates. In devices based on a pair of chiral perovskites, the use of circularly polarized light (CPL) as the optical stimuli mimicked a series of electrical and opto-synaptic functionalities in order to emulate the multifunctional complex behavior of the human brain.
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