We report very low-loss deuterated silicon nitride (SiN:D) micro-ring resonators fabricated by back-end CMOS compatible low-temperature plasma-enhanced chemical vapor deposition (PECVD) without annealing. Strong confinement micro-ring resonators with a quality factor of > 2 million are achieved, corresponding to a propagation loss in the 1460-1610 nm wavelength range of ∼ 0.17 dB/cm. We further report the generation of low-noise coherent Kerr microcomb states including different perfect soliton crystals (PSC) in PECVD SiN:D micro-ring resonators. These results manifest the promising potential of the back-end CMOS compatible SiN:D platform for linear and nonlinear photonic circuits that can be co-integrated with electronics.
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| http://dx.doi.org/10.1364/OE.438436 | DOI Listing |
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