This study demonstrates the performance improvements of InGaN-based red light-emitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.435556 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity.
Nanophotonics
January 2024
The School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China.
Polarized light has promising applications in biological inspections, displays, and precise measurements. Direct emission of polarized light from a semiconductor device is highly desired in order to reduce the size and energy-consumption of the whole system. In this study, we demonstrate a semipolar GaN-based microcavity light-emitting diode (MCLED) that could simultaneously produce green light with perpendicular and parallel polarizations to the -axis.
View Article and Find Full Text PDFMicro/mini light emitting diodes (LEDs) based on AlInGaN material system have vast potential in display applications. Nevertheless, the low internal quantum efficiency (IQE) of InGaN-based red LED limits its development and application. In the epitaxial structure of our designed red LED, double V-pits layers were used as strain relief layers to reduce compressive strain and improve the IQE of the active layer.
View Article and Find Full Text PDFArticle Synopsis
- This study explores how altering the thickness of AlN nucleation layers affects the strain in GaN layers to produce longer-wavelength red InGaN mini-LEDs.
- By increasing the AlN thickness from 15 nm to 60 nm, the peak emission wavelength of the LEDs shifted from 633 nm to 656 nm, demonstrating potential for improved light emission.
- However, the research also found that while a thickness of 45 nm provided a good balance with an external quantum efficiency (EQE) of 8.5% and a wavelength of 649 nm, increasing thickness beyond this point significantly reduced EQE.
Here, we demonstrate replacing opaque Cr/Pt/Au metal p-electrodes with transparent indium tin oxide (ITO) p-electrodes to increase the light output of InGaN-based micro-light-emitting diodes (micro-LEDs). ITO p-electrodes exhibit high transmittance of ∼ 80% across the visible spectrum and low resistivity, while metal p-electrodes exhibit negligible transmittance and significant absorption. The 20 × 20 µm and 50 × 50 µm green micro-LED arrays with ITO p-electrodes yield 1.
View Article and Find Full Text PDFThis work reports a high-performance InGaN-based red-emitting LED with a strain-release interlayer (SRI) consisting of an InGaN stress-release layer (SRL) and an AlN dislocation confinement layer (DCL) in unintentionally doped GaN (u-GaN). The SRL introduces a tensile strain which could decrease the in-plane compressive stress of the u-GaN layer, while the DCL could reduce the dislocation density and thus improve the crystal quality of the u-GaN layer. Consequently, a high-efficiency InGaN-based red-emitting LED with a peak wavelength of 651 nm and an external quantum efficiency of 6.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!