We study the dispersion and scattering properties of electromagnetic modes coupled to a helically ordered spin lattice hosted by a dielectric oxide with a ferroelectric polarization driven by vector spin chirality. Quasianalytical approaches and full-fledged numerics evidence the formation of a chiral magnonic photonic band gap and the presence of gate-voltage dependent circular dichroism in the scattering of electromagnetic waves from the lattice. Gating couples to the emergent ferroelectric polarization and hence, to the underlying vector-spin chirality. The theory relies on solving simultaneously Maxwell's equations coupled to the driven localized spins taking into account their spatial topology and spatial anisotropic interactions. The developed approach is applicable to various settings involving noncollinear spins and multiferroic systems with potential applications in noncollinear magnetophotonics.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1103/PhysRevLett.127.127601 | DOI Listing |
Small
December 2024
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice matching and the high-temperature rapid thermal annealing process, which are not always compatible with CMOS fabrication. However, the advent of the ferroelectric semiconductor α-InSe offers a compelling solution to these challenges.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
December 2024
Nankai University, School of Materials Science and Engineering, CHINA.
Chiral hybrid organic-inorganic metal halides (HOMHs) hold great promise in broad applications ranging from ferroelectrics, spintronics to nonlinear optics, owing to their broken inversion symmetry and tunable chiroptoelectronic properties. Typically, chiral HOMHs are constructed by chiral organic cations and metal anion polyhedra, with the latter regarded as optoelectronic active units. However, the primary design approaches are largely constrained to regulation of general components within structural formula.
View Article and Find Full Text PDFAdv Mater
December 2024
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.
HfO-based multi-bit ferroelectric memory combines non-volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing. However, some challenges remain, notably polarization variation, high operation voltage, and poor endurance performance. Here we show Hf ZrO (x = 0.
View Article and Find Full Text PDFAdv Mater
December 2024
Wuzhen Laboratory, Jiaxing, 314500, P. R. China.
Phase boundary is highly recognized for its capability in engineering various physical properties of ferroelectrics. Here, field-induced polarization rotation is reported in a high-performance (K, Na)NbO-based ferroelectric system at the rhombohedral-tetragonal phase boundary. First, the lattice structure is examined from both macroscopic and local scales, implementing Rietveld refinement and pair distribution function analysis, respectively.
View Article and Find Full Text PDFAdv Mater
December 2024
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
Through the stacking technique of 2D materials, the interfacial polarization can be switched by an interlayer sliding, known as sliding ferroelectricity, which is advantageous in ultra-thin thickness, high switching speed, and high fatigue resistance. However, uncovering the relationship between the sliding path and the polarization state in rhombohedral-stacked materials remains a challenge, which is the key to 2D sliding ferroelectricity. Here, layer-dependent multidirectional sliding ferroelectricity in rhombohedral-stacked InSe (γ-InSe) is reported via dual-frequency resonance tracking piezoresponse force microscopy and conductive atomic force microscopy.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!