Zinc telluride thin films with different thicknesses were grown onto glass substrates by the rf magnetron sputtering technique, using time as a variable growth parameter. All other deposition process parameters were kept constant. The deposited thin films with thickness from 75 to 460 nm were characterized using X-ray diffraction, electron microscopy, atomic force microscopy, ellipsometry, and UV-Vis spectroscopy, to evaluate their structures, surface morphology, topology, and optical properties. It was found out that the deposition time increase leads to a larger growth rate. This determines significant changes on the ZnTe thin film structures and their surface morphology. Characteristic surface metrology parameter values varied, and the surface texture evolved with the thickness increase. Optical bandgap energy values slightly decreased as the thickness increased, while the mean grains radius remained almost constant at ~9 nm, and the surface to volume ratio of the films decreased by two orders of magnitude. This study is the first (to our knowledge) that thoroughly considered the correlation of film thickness with ZnTe structuring and surface morphology characteristic parameters. It adds value to the existing knowledge regarding ZnTe thin film fabrication, for various applications in electronic and optoelectronic devices, including photovoltaics.
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http://dx.doi.org/10.3390/nano11092286 | DOI Listing |
Phys Chem Chem Phys
October 2024
School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China.
Recently, the search for materials with high photoelectric conversion efficiency has emerged as a significant research hotspot. Unlike p-n junctions, the bulk photovoltaic effect (BPVE) can also materialize within pure crystals. Here, we propose wurtzite and zinc blende semiconductors without inversion symmetry (AgI, GaAs, CdSe, CdTe, SiGe, ZnSe, and ZnTe) as candidates for achieving the BPVE and investigate the factors that affect the shift current.
View Article and Find Full Text PDFJ Phys Condens Matter
March 2024
School of Physical Sciences, National Institute of Science Education and Research (NISER) Bhubaneswar, An OCC of Homi Bhabha National Institute, Jatni 752050, Odisha, India.
The ZnTe thin film is a potential material for optoelectronic devices in extreme temperature and radiation environments. In this report, the thermal conductivity of ZnTe films is measured non-invasively using the micro-Raman method and correlated with the phonon anharmonic effect. The evolution of crystalline ZnTe thin films from Te/ZnO bilayer by thermal annealing at 450 C has been observed above the melting point of Te, which is confirmed from x-ray diffraction and high-resolution transmission electron microscopy.
View Article and Find Full Text PDFHeliyon
November 2023
Dept. of Electrical Electronic and Systems Engineering, FKAB, Universiti Kebangsaan Malaysia, Bangi 43600, Selangor, Malaysia.
Recent advancements in CdTe solar cell technology have introduced the integration of flexible substrates, providing lightweight and adaptable energy solutions for various applications. Some of the notable applications of flexible solar photovoltaic technology include building integrated photovoltaic systems (BIPV), transportation, aerospace, satellites, etc. However, despite this advancement, certain issues regarding metal and -CdTe remained unresolved.
View Article and Find Full Text PDFACS Nano
November 2023
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China.
Controlling the dynamic processes, such as generation, separation, transport, and recombination, of photoexcited carriers in a semiconductor is foundational in the design of various devices for optoelectronic applications. One may imagine that if different processes can be manipulated in one single device and thus generate useful signals, a multifunctional device can be realized, and the toolbox for integrated optoelectronics will be expanded. Here, we revealed that in a graphene/ZnTe/graphene van der Waals (vdW) heterostructure, the carriers can be generated by illumination from visible to infrared frequencies, and thus, the detected spectrum range extends to the communication band, well beyond the band gap of ZnTe (2.
View Article and Find Full Text PDFSensors (Basel)
June 2023
Kotel'nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (Fryazino Branch), sq. Vvedenskogo 1, Fryazino, Moscow 141190, Russia.
A comparative study of figure-of-merit fiber sensors of the mass concentration of NaCl solutions based on single-mode and multi-mode fibers was carried out. Lossy mode resonance is realized on chemically thinned sections of optical fibers to various diameters (from 26 to 100 μm) coated with ZnTe. Thin-film coatings were applied using the method of metalorganic chemical vapor deposition (MOCVD).
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