Carbon nanotube field effect transistor (CNT FET) aptasensors have been investigated for the detection of adenosine using two different aptamer sequences, a 35-mer and a 27-mer. We found limits of detection for adenosine of 100 pM and 320 nM for the 35-mer and 27-mer aptamers, with dissociation constants of 1.2 nM and 160 nM, respectively. Upon analyte recognition the 35-mer adenosine aptamer adopts a compact G-quadruplex structure while the 27-mer adenosine aptamer changes to a folded duplex. Using the CNT FET aptasensor platform adenosine could be detected with high sensitivity over the range of 100 pM to 10 µM, highlighting the suitability of the CNT FET aptasensor platform for high performance adenosine detection. The aptamer restructuring format is critical for high sensitivity with the G-quadraplex aptasensor having a 130-fold smaller dissociation constant than the duplex forming aptasensor.
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http://dx.doi.org/10.3390/nano11092280 | DOI Listing |
Adv Mater
January 2025
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing, 100871, China.
Highly sensitive shortwave infrared (SWIR) detectors are essential for detecting weak radiation (typically below 10 W·Sr·cm·µm) with high-end passive image sensors. However, mainstream SWIR detection based on epitaxial photodiodes cannot effectively detect ultraweak infrared radiation due to the lack of inherent gain. Here, we develop a heterojunction-gated field-effect transistor (HGFET) consisting of a colloidal quantum dot (CQD)-based p-i-n heterojunction and a carbon nanotube (CNT) field-effect transistor, which achieves a high inherent gain based on an opto-electric decoupling mechanism for suppressing noise.
View Article and Find Full Text PDFNanotechnology
November 2024
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
In this paper, we obtained n-type top-gate carbon nanotube (CNT) thin film field effect transistors (FET) with source/drain extensions structure through dielectrics optimization strategy, combining the yttrium layer with HfOdielectric argon annealing process, and metal contacts. The mechanism for enhanced n-type conduction was explained as being due to the vertical diffusion of yttrium to the HfOdielectric during argon annealing. This diffusion causes a bending of the energy band, which results in more positive fixed charges, and a reduction in the electron injection barrier between the low work function source/drain Cr electrode and CNT thin film.
View Article and Find Full Text PDFNanotechnology
November 2024
Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India.
Carbon nanotube (CNT)/ZnO/ polyvinylidene fluoride (PVDF) polymer composite phototransistor is studied for the effect of CNT loading and the photoinduced modulation on its transfer characteristics. XRD study shows that the induced strain in the composite is due to the addition of CNT to the ZnO/PVDF composite. The percentage of-phase present in PVDF is estimated through Raman spectroscopy and the composite's spectral response is determined by UV-Vis absorbance spectroscopy.
View Article and Find Full Text PDFACS Nano
October 2024
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of Electronics, Peking University, Beijing 100871, China.
Nanomaterials (Basel)
August 2024
School of Integrated Circuits, Tsinghua University, Beijing 100084, China.
The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices.
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