AI Article Synopsis
- We studied how the metal gate work function changes with various metal and high-k dielectric combinations by measuring capacitance-voltage shifts, especially focusing on dielectric thickness.
- We looked into how different thermal treatments affect the work function and connected shifts to dipole formations at the interfaces between metal/high-k and high-k/SiO.
- Our findings on work function changes were supported by testing the erase performance of metal/high-k/ONO/Si capacitors, revealing that while dipole formation complicates the work function extraction, it doesn't greatly impact erase performance.
Article Abstract
We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance-voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467353 | PMC |
| http://dx.doi.org/10.3390/mi12091084 | DOI Listing |
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