AI Article Synopsis
- Light loss significantly impacts the quantum efficiency of photodetectors, prompting research into enhancements for silicon-based devices.
- The authors developed silicon nanometer truncated cone arrays (Si NTCAs) paired with graphene to create a high-performance photodetector that improves light absorption and reduces surface recombination issues.
- This innovative design achieved a quantum efficiency of 97% at 780 nm and rapid response times, contributing to advancements in silicon photodetector technology and integrated photoelectric systems.
Article Abstract
Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8473289 | PMC |
| http://dx.doi.org/10.3390/s21186146 | DOI Listing |
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