AI Article Synopsis
- The study focuses on magnetotransport in high-quality graphene devices made up of monolayer graphene sandwiched between hexagonal boron nitride layers (hBN/Gr/hBN).
- At temperatures above approximately 40 K, the device shows negative magnetoconductance near the Dirac point, whereas it shifts to positive magnetoconductance at lower temperatures, indicating quantum interference effects.
- This unique behavior and the elastic scattering mechanism observed in the hBN/Gr/hBN structure differ significantly from that of traditional graphene on silicon dioxide (SiO), with the graphene device maintaining nonzero magnetoconductance at elevated temperatures up to 300 K.
Article Abstract
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8458370 | PMC |
| http://dx.doi.org/10.1038/s41598-021-98266-4 | DOI Listing |
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