We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers ranging from Gaussian to a triangular envelope function in comparison with a square potential barrier. The transmission coefficient is calculated numerically for each case and applied to the corresponding tunneling conductance. It is well known that Klein tunneling in graphene will be greatly reduced in gapped graphene. Our results further demonstrate that such a decrease of transmission can be significantly enhanced for spatially-modulated potential barriers. Moreover, we investigate the effect from a bias field applied to those barrier profiles, from which we show that it enables the control of electron flow under normal incidence. Meanwhile, the suppression of Klein tunneling is found more severe for a non-square barrier and exhibits a strong dependence on bias-field polarity for all kinds of barriers. Finally, roles of a point impurity on electron transmission and conductance are analyzed with a sharp peak appearing in electron conductance as the impurity atom is placed in the middle of a square barrier. For narrow triangular and Gaussian barriers, however, the conductance peaks become significantly broadened, associated with an enhancement in tunneling conductance.
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http://dx.doi.org/10.1088/1361-648X/ac2866 | DOI Listing |
Nano Lett
December 2024
Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea.
The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this resistance was unclear. This study focused on dual-gate bilayer graphene (BLG) devices with naturally cleaved edges, examining how edge-etching with an oxygen plasma process affects electron transport.
View Article and Find Full Text PDFPhys Rev Lett
August 2024
1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany.
Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and superconductivity. This Letter reports on a novel family of correlated phases characterized by spin and valley ordering, distinct from those reported previously. These phases emerge in electron-doped bilayer graphene where the energy bands are exceptionally flat, manifested through an intriguing nonlinear current-bias behavior that occurs at the onset of the phases and is accompanied by an insulating temperature dependence.
View Article and Find Full Text PDFPhys Rev Lett
June 2024
CNR-Istituto di Struttura della Materia (CNR-ISM), Via del Fosso del Cavaliere 100, 00133 Roma, Italy.
We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle- and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the intercalation of Eu in the graphene/Ni(111) interface gives rise to a gapped freestanding dispersion of the ππ^{*} Dirac cones at the K[over ¯] point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature and a spin-polarized Van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band.
View Article and Find Full Text PDFSci Rep
June 2024
Department of Physics, University of Zanjan, University Blvd., Zanjan, 45371-38791, Iran.
We explore the electronic transport characteristics of gapped graphene subjected to a perpendicular magnetic field and scalar potential barriers. Employing the Dirac-Weyl Hamiltonian and the transfer-matrix method, we calculate the transmission and conductance of the system. Our investigation delves into the impact of the energy, the gap energy parameter ( ) and the magnetic flux parameters, including the number of magnetic barriers (N), the magnetic field strength (B) and the width of the magnetic barriers.
View Article and Find Full Text PDFNano Lett
July 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou 310024, Zhejiang Province, China.
Stacking orders provide a unique way to tune the properties of two-dimensional materials. Recently, ABCB-stacked tetralayer graphene has been predicted to possess atypical elemental ferroelectricity arising from its symmetry breaking but has been experimentally explored very little. Here, we observe pronounced nonlinear optical second-harmonic generation (SHG) in ABCB-stacked tetralayer graphene while absent in both ABAB- and ABCA-stacked allotropes.
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