Plasmon-Enhanced Light Absorption in (p-i-n) Junction GaAs Nanowire Solar Cells: An FDTD Simulation Method Study.

Nanoscale Res Lett

Department of Science and Technology (ITN), Linköping University, Campus Norrköping, 601 74, Norrköping, Sweden.

Published: September 2021

A finite-difference time-domain method is developed for studying the plasmon enhancement of light absorption from vertically aligned GaAs nanowire arrays decorated with Au nanoparticles. Vertically aligned GaAs nanowires with a length of 1 µm, a diameter of 100 nm and a periodicity of 165-500 nm are functionalized with Au nanoparticles with a diameter between 30 and 60 nm decorated in the sidewall of the nanowires. The results show that the metal nanoparticles can improve the absorption efficiency through their plasmonic resonances, most significantly within the near-bandgap edge of GaAs. By optimizing the nanoparticle parameters, an absorption enhancement of almost 35% at 800 nm wavelength is achieved. The latter increases the chance of generating more electron-hole pairs, which leads to an increase in the overall efficiency of the solar cell. The proposed structure emerges as a promising material combination for high-efficiency solar cells.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452811PMC
http://dx.doi.org/10.1186/s11671-021-03603-1DOI Listing

Publication Analysis

Top Keywords

light absorption
8
gaas nanowire
8
solar cells
8
vertically aligned
8
aligned gaas
8
plasmon-enhanced light
4
absorption
4
absorption p-i-n
4
p-i-n junction
4
gaas
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!