Dissipationless flows in single-component superfluids have a significant degree of universality. In ^{4}He, the dissipationless mass flow occurs with a superfluid velocity determined by the gradient of the superfluid phase. However, in interacting superfluid mixtures, principally new effects appear. In this Letter, we demonstrate a new kind of dissipationless phenomenon arising in mixtures of interacting bosons in optical lattices. We point out that for a particular class of optical lattices, bosons condense in a state where one of the components' superflow results in dissipationless mass flow of the other component, in a direction different from either of the components' superfluid velocities. The free-energy density of these systems contains a vector productlike interaction of superfluid velocities, producing the dissipationless noncollinear entrainment. The effect represents a superfluid counterpart of the Spin Hall effect.
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http://dx.doi.org/10.1103/PhysRevLett.127.100403 | DOI Listing |
Phys Chem Chem Phys
January 2025
Ronin Institute, Montclair, New Jersey 07043, USA.
The Rashba effect in a nonmagnetic condensed-matter system is described by the reduction of point-group symmetries. The inversion, two-fold rotation, and reflection symmetries transforming the wavevector to - are identified as the origin of a degenerate state according to the time-reversal symmetry. The lack of these symmetries in a bulk system or the breaking of these in a surface system is then identified as the origin of a nondegenerate state.
View Article and Find Full Text PDFMater Horiz
January 2025
School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing 100083, China.
Realizing spin-orbit torque (SOT)-driven magnetization switching offers promising opportunities for the advancement of next-generation spintronics. However, the relatively low charge-spin conversion efficiency accompanied by an ultrahigh critical switching current density () remains a significant obstacle to the further development of SOT-based storage elements. Herein, spin absorption engineering at the ferromagnet/nonmagnet interface is firstly proposed to achieve high SOT efficiency in Pt/Co/Ir trilayers.
View Article and Find Full Text PDFiScience
January 2025
School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
The quantum anomalous Hall effect (QAHE) demonstrates the potential for achieving quantized Hall resistance without the need for an external magnetic field, making it highly promising for reducing energy loss in electronic devices. Its realization and research rely heavily on precise first-principles calculations, which are essential for analyzing the electronic structures and topological properties of novel two-dimensional (2D) materials. This review article explores the theoretical progress of QAHE in 2D hexagonal monolayers with strong spin-orbit coupling and internal magnetic ordering.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea.
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, a new approach is demonstrated for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide FeGeTe/SrTiO heterostructure.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, SE-10691, Stockholm, Sweden.
Non-trivial band topology along with magnetism leads to different novel quantum phases. When time-reversal symmetry is broken in three-dimensional topological insulators (TIs) through, e.g.
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