The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
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http://dx.doi.org/10.1021/acs.nanolett.1c02495 | DOI Listing |
Phys Rev Lett
December 2024
QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland.
Ordered media often support vortex structures with intriguing topological properties. Here, we investigate non-Abelian vortices in tetrahedral order using the mathematical formalism of colored links. Due to the generality of our methods, the results apply to all physical systems governed by tetrahedral order, such as the cyclic phase of spin-2 Bose-Einstein condensates and the tetrahedratic phase of bent-core nematic liquid crystals.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, 430074 Wuhan, China.
The frustrated honeycomb spin model can stabilize a subextensively degenerate spiral spin liquid with nontrivial topological excitations and defects, but its material realization remains rare. Here, we report the experimental realization of this model in the structurally disorder-free compound GdZnPO. Using a single-crystal sample, we find that spin-7/2 rare-earth Gd^{3+} ions form a honeycomb lattice with dominant second-nearest-neighbor antiferromagnetic and first-nearest-neighbor ferromagnetic couplings, along with easy-plane single-site anisotropy.
View Article and Find Full Text PDFAdv Mater
December 2024
State Key Laboratory for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
Despite extensive studies on magnetic proximity effects, the fundamental excitonic properties of the 2D semiconductor-magnet heterostructures remain elusive. Here, the presence of localized excitons in MoSe/CrSBr heterostructures is unveiled, represented by a new photoluminescence emission feature, X. Our findings reveal that X originates from excitons confined by intrinsic defects in the CrSBr layer.
View Article and Find Full Text PDFSmall
December 2024
State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing, 100029, China.
Lead halide perovskites demonstrate outstanding luminescent characteristics. However, the inclusion of lead components restricts their extensive utilization. Halide perovskite materials, formulated as AM(III)M(I)X or AM(IV)X, possess the potential to serve as stable and eco-friendly substitutes for optoelectronic applications.
View Article and Find Full Text PDFPhys Chem Chem Phys
December 2024
Department of Physics, Koc University, Rumelifeneri Yolu, Sariyer 34450, Istanbul, Turkey.
Transition metal dichalcogenides (TMDs) exhibit a wide range of electronic properties due to their structural diversity. Understanding their defect-dependent properties might enable the design of efficient, bright, and long-lifetime quantum emitters. Here, we use density functional theory (DFT) calculations to investigate the 2H, 1T, and 1T' phases of MoS, WS, MoSe, WSe and the effect of defect densities on the electronic band structures, focusing on the influence of chalcogen vacancies.
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