Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBiI is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the / ratio of 10 for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBiI, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acsami.1c08424 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
School of Materials and Energy, Lanzhou University (LZU), Lanzhou 730000, China.
Complementary neural network circuits combining multifunctional high-performance p-type with n-type organic artificial synapses satisfy sophisticated applications such as image cognition and prosthesis control. However, implementing the dual-modal memory features that are both volatile and nonvolatile in a synaptic transistor is challenging. Herein, for the first time, we propose a single vertical n-type organic synaptic transistor (VNOST) with a novel polymeric organic mixed ionic-electronic conductor as the core channel material to achieve dual-modal synaptic learning/memory behaviors at different operating current densities via the formation of an electric double layer and the reversible ion doping.
View Article and Find Full Text PDFMicrosyst Nanoeng
January 2025
State Key Laboratory of Explosion Science and Safety Protection, Beijing Institute of Technology, Ministry of Education, 100081, Beijing, China.
Recently, the biologically inspired intelligent artificial visual neural system has aroused enormous interest. However, there are still significant obstacles in pursuing large-scale parallel and efficient visual memory and recognition. In this study, we demonstrate a 28 × 28 synaptic devices array for the artificial visual neuromorphic system, within the size of 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Gyeongsang National University, Jinju, Gyeongsangnam-do 52828, Republic of Korea.
Advances in the semiconductor industry have been limited owing to the constraints imposed by silicon-based CMOS technology; hence, innovative device design approaches are necessary. This study focuses on "more than Moore" approaches, specifically in neuromorphic computing. Although MoS devices have attracted attention as neuromorphic computing candidates, their performances have been limited due to environment-induced perturbations to carrier dynamics and the formation of defect states.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China.
Tactile sensation and recognition in the human brain are indispensable for interaction between the human body and the surrounding environment. It is quite significant for intelligent robots to simulate human perception and decision-making functions in a more human-like way to perform complex tasks. A combination of tactile piezoelectric sensors with neuromorphic transistors provides an alternative way to achieve perception and cognition functions for intelligent robots in human-machine interaction scenarios.
View Article and Find Full Text PDFACS Nano
January 2025
School of Electrical Engineering, Korea University, Seoul 02841, Korea.
Artificial synapses for neuromorphic computing have been increasingly highlighted, owing to their capacity to emulate brain activity. In particular, solid-state electrolyte-gated electrodes have garnered significant attention because they enable the simultaneous achievement of outstanding synaptic characteristics and mass productivity by adjusting proton migration. However, the inevitable interface traps restrict the protons at the channel-electrolyte interface, resulting in the deterioration of synaptic characteristics.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!