The typically nonlinear and asymmetric response of synaptic memristors to positive and negative electrical pulses makes the realization of accurate deep neural networks very challenging. Here, we integrate a two-terminal valence change memory (VCM) into a photonic/plasmonic circuit and show that the switching properties of this memristor become more gradual and symmetric under light irradiation. The added optical input acts on the VCM as a third, independent modulation channel. It locally heats the active area of the device, which enhances the generation of oxygen vacancies and broadens the resulting nanoscale conductive filaments. The measured conductance modulation of the VCM is then inserted into a neural network simulator. Using the MNIST data set of handwritten digits as an application, a light-enhanced recognition accuracy of 93.53% is demonstrated, similar to ideally performing memristors (94.86%) and much higher than those without light (67.37%). Notably, the optical signal does not increase the overall energy consumption by more than 3.2%. Finally, an approach to scale up our electro-optical technology is proposed, which could allow high-density, energy-efficient neuromorphic computing chips.
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http://dx.doi.org/10.1021/acsnano.1c04654 | DOI Listing |
J Neural Eng
January 2025
Mechanical and Aerospace, Missouri University of Science and Technology, 400 W 13th St., Rolla, Missouri, 65409, UNITED STATES.
This work explores use of a few-shot transfer learning method to train and implement a convolutional spiking neural network (CSNN) on a BrainChip Akida AKD1000 neuromorphic system-on-chip for developing individual-level, instead of traditionally used group-level, models using electroencephalographic data. The efficacy of the method is studied on an advanced driver assist system related task of predicting braking intention. \emph{Approach}: Data are collected from participants operating an NVIDIA JetBot on a testbed simulating urban streets for three different scenarios.
View Article and Find Full Text PDFNano Lett
January 2025
Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.
Recent developments in artificial intelligence and the internet-of-things have created great demand for low-power microelectronic devices. Two-dimensional (2D) electrical switching materials are extensively used in neuromorphic computing technology, yet their high leakage current and low endurance impede their further application. This study presents a vertical crossbar-structured conductive-bridge threshold switching device based on 2D TaSe oxide.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
SrFeO (SFO) offers a topotactic phase transformation between an insulating brownmillerite SrFeO (BM-SFO) phase and a conductive perovskite SrFeO (PV-SFO) phase, making it a competitive candidate for use in resistive memory and neuromorphic computing. However, most of existing SFO-based memristors are nonvolatile devices which struggle to achieve short-term synaptic plasticity (STP). To address this issue and realize STP, we propose to leverage ferroelectric polarization to effectively draw ions across the interface so that the PV-SFO conductive filaments (CFs) can be ruptured in absence of an external field.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
University of Strathclyde, Institute of Photonics, SUPA Dept of Physics, Glasgow, United Kingdom.
We report a spiking flip-flop memory mechanism that allows controllably switching between neural-like excitable spike-firing and quiescent dynamics in a resonant tunneling diode (RTD) neuron under low-amplitude (<150 mV pulses) and high-speed (ns rate) inputs pulses. We also show that the timing of the set-reset input pulses is critical to elicit switching responses between spiking and quiescent regimes in the system. The demonstrated flip-flop spiking memory, in which spiking regimes can be controllably excited, stored, and inhibited in RTD neurons via specific low-amplitude, high-speed signals (delivered at proper time instants) offers high promise for RTD-based spiking neural networks, with the potential to be extended further to optoelectronic implementations where RTD neurons and RTD memory elements are deployed alongside for fast and efficient photonic-electronic neuromorphic computing and artificial intelligence hardware.
View Article and Find Full Text PDFACS Nano
January 2025
IBM Research Europe - Zurich, 8803 Rüschlikon, Switzerland.
Devices with a highly nonlinear resistance-voltage relationship are candidates for neuromorphic computing, which can be achieved by highly temperature dependent processes like ion migration. To explore the thermal properties of such devices, Scanning Thermal Microscopy (SThM) can be employed. However, due to the nonlinearity, the high resolution and quantitative method of AC-modulated SThM cannot readily be used.
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