Defect and interlayer engineering are considered as two promising strategies to alter the electronic structures of sensing materials for improved gas sensing properties. Herein, ethylene glycol intercalated Al-doped SnS (EG-Al-SnS) featuring Al doping, sulfur (S) vacancies, and an expanded interlayer spacing was prepared and developed as an active NO sensing material. Compared to the pristine SnS with failure in detecting NO at room temperature, the developed EG-Al-SnS exhibited a better conductivity, which was beneficial for realizing the room-temperature NO sensing. As a result, a high sensing response of 410% toward 2 ppm NO was achieved at room temperature by using the 3% EG-Al-SnS as the sensing material. Such outstanding sensing performance was attributed to the enhanced electronic interaction of NO on the surface of SnS induced by the synergistic effect of Al doping, S vacancies, and the expanded interlayer spacing, which is directly revealed by the in-suit measurement based on near-ambient pressure X-ray photoelectronic spectroscopy (NAP-XPS). Furthermore, to identify the role of Al doping, S vacancies, and the expanded interlayer spacing in enhancing the NO sensing properties, a series of comparative experiments and theoretical calculations were performed.
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