Effect of low temperature structural phase transitions in BaTiOon electrical transport through a metal-ferroelectric-metal multilayer of AuCr/BaTiO/Nb:SrTiO.

In this paper we report an investigation of electronic transport through the metal-ferroelectric-metal (MFM) multilayer consisting of AuCr/BaTiO/Nb:SrTiOover a temperature range of 100 K-300 K where BaTiO(BTO) shows a series of structural phase transitions leading to change of magnitude as well as the orientation of the polarizationP→. We observed that the bias dependent barrier heights associated with the interfaces carry strong signature of the phase transitions in the BTO layer which lead to a strong temperature dependent asymmetric transport, when cooled down below room temperature. Specifically, it is observed that the temperature dependence is closely correlated to low temperature transitions in the BTO layer as revealed through the temperature dependent x-ray diffraction (XRD), capacitance as well as resistivity behavior of the BTO layer. There is substantial enhancement of the asymmetry in the device current that occurs at or close to temperatures∼ 190 K where BTO shows a crystallographic phase change to the low temperature rhombohedral phase. The temperature dependent changes occur due to barrier modulation at the interfaces of AuCr/BaTiOas well as BaTiO/Nb:SrTiOthat softens on cooling due to inhomogenities present there. The change in barrier on change of the bias direction has been observed belowwhich arises from alignment of the polarization in-plane or out-of-plane as determined by tensile or compressive character of the in-plane strain in the BTO film. We also discuss the effect of space charge determined by the oxygen vacancies in the interface region, regulated by the applied bias.