AI Article Synopsis
- * The thin-film encapsulation (TFE) properties were tested, showing varied performance based on film thickness and deposition method, particularly in how SnO reacts differently in thermal versus plasma ALD processes.
- * A nanolaminate structure made of SiO and SnO demonstrated effective water vapor transmission resistance, making it suitable for use as protective layers in electronic devices by inhibiting gas diffusion.
Article Abstract
High-density SnO and SiO thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (HO) and O plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnO and SiO were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnO. The film density, crystallinity, and pinholes formed in the SnO film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiO and SnO deposited using plasma-enhanced ALD was measured using WVTR (HO molecule diffusion) at 2.43 × 10 g/m day with a 10/10 nm NL structure and time-lag gas permeation measurement (H gas diffusion) for applications as passivation layers in various electronic devices.
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| http://dx.doi.org/10.1021/acsami.1c09901 | DOI Listing |
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