Magneto-ionics is a fast developing research field which opens the perspective of energy efficient magnetic devices, where the magnetization direction is controlled by an electric field which drives the migration of ionic species. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of Pt/Co/oxide stacks covered by ZrO , acting as a ionic conductor, is tuned by a gate voltage at room temperature. A large variation of the PMA is obtained by modifying the oxidation of the cobalt layer through the migration of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with under-oxidized Co, to in-plane, with over-oxidized Co, passing through an out-of-plane magnetization state. The switching time between the different magnetic states is limited by the ion drift velocity. This depends exponentially on the gate voltage, and is varied by over five orders of magnitude, from several minutes to a few ms. The variation of the PMA versus time during the application of the gate voltage can be modeled with a parabolic variation of the PMA and an exponential decrease of the Co oxidation rate. The possibility to explain the observed effect with a simple theoretical model opens the possibility to engineer materials with optimized properties.

Download full-text PDF

Source
http://dx.doi.org/10.1002/smll.202102427DOI Listing

Publication Analysis

Top Keywords

gate voltage
12
variation pma
12
magnetic anisotropy
8
kinetics ion
4
ion migration
4
migration electric
4
electric field-driven
4
field-driven manipulation
4
magnetic
4
manipulation magnetic
4

Similar Publications

Two-dimensional (2D) organic-inorganic halide perovskites are promising sensitive materials for optoelectronic applications due to their strong light-matter interactions, layered structure, long carrier lifetime and diffusion length. However, a high gate bias is indispensable for perovskite-based phototransistors to optimize detection performances, since ion migration seriously screens the gate electric field and the deposition process introduces intrinsic defects, which induces severe leakages and large power dissipation. In this work, an ultrasensitive phototransistor based on the (PEA)SnI perovskite and the Al:HfO ferroelectric layer is meticulously studied, working without an external gate voltage.

View Article and Find Full Text PDF

Nanoscale semiconductors offer significant advantages over their bulk semiconductor equivalents for electronic devices as a result of the ability to geometrically tune electronic properties, the absence of internal grain boundaries, and the very low absolute number of defects that are present in such small volumes of material. However, these advantages can only be realized if reliable contacts can be made to the nanoscale semiconductor using a scalable, low-cost process. Although there are many low-cost "bottom-up" techniques for directly growing nanomaterials, the fabrication of contacts at the nanoscale usually requires expensive and slow techniques like e-beam lithography that are also hard to scale to a level of throughput that is required for commercialization.

View Article and Find Full Text PDF

We report a new approach for fabricating gate-tunable thermal emissivity surfaces by spraying them on graphene ink. The devices consist of a multilayer graphene (MLG)/porous alumina membrane/gold stack, in which the MLG is deposited by spraying the graphene ink onto the porous membrane using an airbrush. The graphene ink consists of μm-sized flakes of MLG suspended in a solution of polyvinylpyrrolidone and ethylene glycol.

View Article and Find Full Text PDF

Integrating two-dimensional (2D) semiconductors into nanophotonic structures provides a versatile platform for advanced optoelectronic devices. A key challenge in realizing these systems is to achieve control over light emission from these materials. In this work, we demonstrate the modulation of photoluminescence (PL) in transition metal dichalcogenides (TMDs) coupled to surface lattice resonances in metal nanoparticle arrays.

View Article and Find Full Text PDF

Small molecule inhibits KCNQ channels with a non-blocking mechanism.

Nat Chem Biol

January 2025

Shanghai Key Laboratory of Regulatory Biology, Institute of Biomedical Sciences and School of Life Sciences, East China Normal University, Shanghai, China.

Voltage-gated ion channels (VGICs) are crucial targets for neuropsychiatric therapeutics owing to their role in controlling neuronal excitability and the established link between their dysfunction and neurological diseases, highlighting the importance of identifying modulators with distinct mechanisms. Here we report two small-molecule modulators with the same chemical scaffold, Ebio2 and Ebio3, targeting a potassium channel KCNQ2, with opposite effects: Ebio2 acts as a potent activator, whereas Ebio3 serves as a potent and selective inhibitor. Guided by cryogenic electron microscopy, patch-clamp recordings and molecular dynamics simulations, we reveal that Ebio3 attaches to the outside of the inner gate, employing a unique non-blocking inhibitory mechanism that directly squeezes the S6 pore helix to inactivate the KCNQ2 channel.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!