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Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure. | LitMetric

Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure.

Micromachines (Basel)

Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Dayton, OH 45433, USA.

Published: July 2021

AI Article Synopsis

  • Researchers created seven p-type AlGaN samples with about 25% aluminum content using molecular beam epitaxy to study their p-type performance, focusing on different doping structures.
  • A layer-structured sample showed better electrical properties, exhibiting lower sheet resistance and higher effective hole mobility compared to a uniformly Mg-doped reference sample, due to effective hole diffusion between layers.
  • The best performance was found in a sample with alternating Mg-doped and undoped layers of 6/4 nm thickness, achieving significantly lower sheet resistance and higher hole mobility compared to uniform doping.

Article Abstract

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/un-doped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8307679PMC
http://dx.doi.org/10.3390/mi12070835DOI Listing

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