Photoluminescence spectroscopy is a nondestructive optical method that is widely used to characterize semiconductors. In the photoluminescence process, a substance absorbs photons and emits light with longer wavelengths via electronic transitions. This paper discusses a method for identifying substances from their photoluminescence spectra using machine learning, a technique that is efficient in making classifications. Neural networks were constructed by taking simulated photoluminescence spectra as the input and the identity of the substance as the output. In this paper, six different semiconductors were chosen as categories: gallium oxide (GaO), zinc oxide (ZnO), gallium nitride (GaN), cadmium sulfide (CdS), tungsten disulfide (WS), and cesium lead bromide (CsPbBr). The developed algorithm has a high accuracy (>90%) for assigning a substance to one of these six categories from its photoluminescence spectrum and correctly identified a mixed GaO/ZnO sample.
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http://dx.doi.org/10.1177/00037028211031618 | DOI Listing |
In this paper, we study the propagation and time-evolution behavior of superfluorescence in an overdamped semiconductor ring microcavity. By introducing a re-coupling mechanism between the unidirectionally propagating superfluorescence and the cooperative exciton state with a specified Gaussian spatial distribution, we can compress the width of the photoluminescence (PL) pulse in both temporal and spatial scales. Using realistic parameters from perovskite superlattice materials, we observe that the maximum intensity increases twofold compared to the ordinary radiation behavior observed in planar microcavity systems.
View Article and Find Full Text PDFDalton Trans
January 2025
College of Materials and New Energy, Chongqing University of Science and Technology, Chongqing, 401331, China.
Achieving multicolor emission is a fascinating goal that remains challenging for zero-dimensional (0D) hybrid halides. We successfully obtained a three-millimeter-scale 0D (MXDA)CdBr (MXDA = CHN) single crystal (SC) by the solvothermal method. It serves as an outstanding host for doping with various valence activators, such as Cu, Mn and Sb, and these doped single crystals emit blue (470 nm), yellow (580 nm) and red (618 nm) fluorescence, which accurately cover a large visible region and achieve efficient multicolor emission.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.
The n-TiO nanoballs-sticks (TiO NBSs) were successfully deposited on p-lightly boron-doped diamond (LBDD) substrates by the hydrothermal method. The temperature-dependent optoelectronic properties and carrier transport behavior of the n-TiO NBS/p-LBDD heterojunction were investigated. The photoluminescence (PL) of the heterojunction detected four distinct emission peaks at 402 nm, 410 nm, 429 nm, and 456 nm that have the potential to be applied in white-green light-emitting devices.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Antimonide laser diodes, with their high performance above room temperature, exhibit significant potential for widespread applications in the mid-infrared spectral region. However, the laser's performance significantly degrades as the emission wavelength increases, primarily due to severe quantum-well hole leakage and significant non-radiative recombination. In this paper, we put up an active region with a high valence band offset and excellent crystalline quality with high luminescence to improve the laser's performance.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Department of Physics and Astronomy Athens, Ohio University, Athens, OH 45701, USA.
High-quality two-dimensional transition metal dichalcogenides (2D TMDs), such as molybdenum disulfide (MoS), have significant potential for advanced electrical and optoelectronic applications. This study introduces a novel approach to control the localized growth of MoS through the selective oxidation of bulk molybdenum patterns using Joule heating, followed by sulfurization. By passing an electric current through molybdenum patterns under ambient conditions, localized heating induced the formation of a molybdenum oxide layer, primarily MoO and MoO, depending on the applied power and heating duration.
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