The physical properties of ovonic threshold switching (OTS) materials are of great interest due to the use of OTS materials as selectors in cross-point array nonvolatile memory systems. Here, we show that the topological constraint theory (TCT) of chalcogenide glasses provides a robust framework to describe the physical properties of sputtered thin film OTS materials and electronic devices. Using the mean coordination number (MCN) of an OTS alloy as a comparative metric, we show that changes in data trends from several measurements are signatures of the transition from a floppy to a rigid glass network as described by TCT. This approach provides a means to optimize OTS selector materials for device applications using film-level measurements.
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| http://dx.doi.org/10.1021/acsami.1c10131 | DOI Listing |
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