Severity: Warning
Message: file_get_contents(https://...@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 176
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 176
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 250
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 1034
Function: getPubMedXML
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3152
Function: GetPubMedArticleOutput_2016
File: /var/www/html/application/controllers/Detail.php
Line: 575
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 489
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
Phthalocyanines (Pc), with or without metal ligands, are still of high research interest, mainly for the application in organic electronics. Because of rather low solubility, Pc-based films are commonly deposited applying various advanced and demanding vacuum techniques, like physical vapor deposition (PVD). In this work, an alternative straightforward approach of NiPc layer formation is proposed in which NH-side groups of nickel(II) tetraamino-phthalocyanine (AmNiPc) are engaged in the process of electrochemical deposition of (AmNiPc) on indium-tin oxide (ITO) substrates. The resulting layer is widely investigated by cyclic voltammetry, atomic force microscopy, UV-vis, and ATR-IR spectroscopies, X-ray diffraction, and photoemission techniques: X-ray and UV-photoelectron spectroscopies. The chemical and electronic structure of (AmNiPc) is characterized. It is shown that the electronic properties of the formed (AmNiPc)/ITO hybrid correspond to the ones previously reported for PVD-NiPc films.
Download full-text PDF |
Source |
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8282193 | PMC |
http://dx.doi.org/10.1021/acs.jpcc.1c01396 | DOI Listing |
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