Highly photoactive FeVO photoanodes with ordered nanoblock morphology and uniform Ti-doping were prepared by drop-casting mixed Ti and V precursors onto FeOOH nanorod films and following an annealing process. The results indicate that Ti is uniformly doped into the FeVO lattice by substituting V and provides an increased number of O vacancies. The optimized film thickness and doping level are 620 nm and 0.3%, respectively. Compared to the undoped sample, the Ti-doped photoanode showed ~ 219% enhancement in photocurrent at 1.0 V vs Ag/AgCl under back illumination of AM 1.5, reaching a state-of-the-art value of ~ 1.47 mA cm, and also achieved stable and efficient overall water splitting activity with evolution rates of 28.3 and 14.1 μmol cmh for H and O, respectively. The excellent PEC performance could be attributed to the remarkably enhanced charge carrier concentration and conductivity, and the facilitated charge transfer kinetics across the semiconductor/electrolyte interface, as a result of Ti-doping.

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http://dx.doi.org/10.1016/j.jcis.2021.07.037DOI Listing

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