Layered van der Waals materials of the family TaTMTe (TM = Ir, Rh, Ru) are showing interesting electronic properties. We report the growth and characterization of TaIrTe, TaRhTe, TaIrRhTe ( = 0.06, 0.14, 0.78, 0.92), TaRuTe single crystals. X-ray powder diffraction confirms that TaRhTe is isostructural to TaIrTe. All these compounds are metallic with diamagnetic behavior. Below ≈ 4 K we observed signatures of the superconductivity in the TaIrRhTe compounds for = 0.92. All samples show weak quadratic-in-field magnetoresistance (MR). However, for TaIrRhTe with ≈ 0.78, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe series the MR is almost isotropic. Electronic structure calculations for TaIrTe and TaRhTe reveal appearance of the Rh band close to the Fermi level.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acs.jpclett.1c01648 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Optimization of In-Situ Growth of Superconducting Al/InAs Hybrid Systems on GaAs for the Development of Quantum Electronic Circuits.
Materials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFInterlayer reconstruction phase transition in van der Waals materials.
Nat Mater
January 2025
Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA.
Van der Waals materials display rich structural polymorphs with distinct physical properties. An atomistic understanding of the phase-transition dynamics, propagation pathway and associated evolution of physical properties is essential for capturing their potential in practical technologies. However, direct visualization of the rapid phase-transition process is fundamentally challenging due to the inherent trade-offs among atomic resolution, field of view and imaging frame rate.
View Article and Find Full Text PDFRaman and Photoluminescence Studies of Quasiparticles in van der Waals Materials.
Nanomaterials (Basel)
January 2025
Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha 410083, China.
Two-dimensional (2D) layered materials have received much attention due to the unique properties stemming from their van der Waals (vdW) interactions, quantum confinement, and many-body interactions of quasi-particles, which drive their exotic optical and electronic properties, making them critical in many applications. Here, we review our past years' findings, focusing on many-body interactions in 2D layered materials, including phonon anharmonicity, electron-phonon coupling (), exciton dynamics, and phonon anisotropy based on temperature (polarization)-dependent Raman spectroscopy and Photoluminescence (PL). Our review sheds light on the role of quasi-particles in tuning the material properties, which could help optimize 2D materials for future applications in electronic and optoelectronic devices.
View Article and Find Full Text PDFForming and compliance-free operation of low-energy, fast-switching HfOS/HfS memristors.
Nanoscale Horiz
January 2025
London Centre for Nanotechnology, 19 Gordon St, London, WC1H 0AH, UK.
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS). Semiconductor-oxide heterostructures are achieved by low temperature (<300 °C) thermal oxidation of HfS under dry conditions, carefully controlling process parameters. The resulting HfOS/HfS heterostructures are integrated between metal contacts, forming vertical crossbar devices.
View Article and Find Full Text PDFSulfur isotope engineering in heterostructures of transition metal dichalcogenides.
Nanoscale Adv
January 2025
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University Ke Karlovu 5, 12116, Prague 2 Czech Republic
Heterostructuring of two-dimensional materials offers a robust platform to precisely tune optoelectronic properties through interlayer interactions. Here we achieved a strong interlayer coupling in a double-layered heterostructure of sulfur isotope-modified adjacent MoS monolayers two-step chemical vapor deposition growth. The strong interlayer coupling in the MoS(S)/MoS(S) was affirmed by low-frequency shear and breathing modes in the Raman spectra.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!