AI Article Synopsis

  • Moiré superlattices in twisted van der Waals materials lead to interesting electronic phases, such as superconductivity and the Mott-insulating state.
  • Inhomogeneity in artificially stacked moiré superlattices makes it difficult to connect the moiré period with the materials' electrical and optical properties.
  • Low-frequency Raman scattering can effectively map this inhomogeneity and detect atomic changes, allowing researchers to visualize small areas with precise twist-angle measurements, aiding in sample characterization for future device development.

Article Abstract

Moiré superlattices can induce correlated-electronic phases in twisted van der Waals materials: strongly correlated quantum phenomena emerge, such as superconductivity and the Mott-insulating state. However, moiré superlattices produced through artificial stacking can be quite inhomogeneous, which hampers the development of a clear correlation between the moiré period and the emerging electrical and optical properties. Here, it is demonstrated in twisted-bilayer transition-metal dichalcogenides that low-frequency Raman scattering can be utilized not only to detect atomic reconstruction, but also to map out the inhomogeneity of the moiré lattice over large areas. The method is established based on the finding that both the interlayer-breathing mode and moiré phonons are highly susceptible to the moiré period and provide characteristic fingerprints. Hyperspectral Raman imaging visualizes microscopic domains of a 5° twisted-bilayer sample with an effective twist-angle resolution of about 0.1°. This ambient methodology can be conveniently implemented to characterize and preselect high-quality areas of samples for subsequent device fabrication, and for transport and optical experiments.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11469034PMC
http://dx.doi.org/10.1002/adma.202008333DOI Listing

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