The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8257887 | PMC |
| http://dx.doi.org/10.1038/s41377-021-00584-9 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Article Synopsis
- A 4H-silicon carbide-on-insulator (4H-SiCOI) is gaining attention in integrated photonics due to its compatibility with CMOS technology, high refractive index, and strong nonlinear properties.
- Researchers are addressing challenges related to spatial mode interactions in micro-resonators, often caused by multimode waveguides, by using Euler bends to improve performance.
- The study demonstrates that these improved micro-resonators, with high Q values and minimal thickness variation, could significantly enhance large-scale integrated nonlinear photonic circuits.
Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. In this work, we carried out an exploratory investigation of the Pockels effect in high-quality-factor (high-Q) 4H-SiC microresonators and demonstrated gigahertz-level electro-optic modulation for the first time. The extracted Pockels coefficients show certain variations among 4H-SiC wafers from different manufacturers, with the magnitudes of and estimated to be in the range of (0.
View Article and Find Full Text PDFSoliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform.
Light Sci Appl
December 2022
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.
View Article and Find Full Text PDFHigh-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics.
Light Sci Appl
July 2021
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 10 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances.
View Article and Find Full Text PDFWe demonstrate, to the best of our knowledge, the first thermally reconfigurable high-Q silicon carbide (SiC) microring resonators with integrated microheaters on a 3C-SiC-on-insulator platform. We extract a thermo-optic coefficient of around 2.67×10/K for 3C-SiC from wavelength shift of a resonator heated by a hot plate.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!