Cu(In,Ga)Se (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269732 | PMC |
| http://dx.doi.org/10.3390/ma14133596 | DOI Listing |
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