Objectives: The aim of this study was to provide baseline data for the assessment of exposure to indium and to prevent adverse health effects among workers engaged in the electronics and related industries in Republic of Korea.
Methods: Total (n = 369) and respirable (n = 384) indium concentrations were monitored using personal air sampling in workers at the following 19 workplaces: six sputtering target manufacturing companies, four manufacturing companies of panel displays, two companies engaged in cleaning of sputtering components, two companies dedicated to the cleaning of sputtering target, and five indium recycling companies.
Results: The level of exposure to total indium ranged from 0.9 to 609.3 μg/m for the sputtering target companies; from 0.2 to 2,782.0 μg/m for the panel display companies and from 0.5 to 2,089.9 μg/m for the indium recycling companies. The level of exposure to respirable indium was in the range of 0.02 to 448.6 μg/m for the sputtering target companies; 0.01 to 419.5 μg/m for the panel display companies; and 0.5 to 436.3 μg/m for the indium recycling companies. The indium recycling companies had the most samples exceeding the exposure standard for indium, followed by sputtering target companies and panel display companies.
Conclusions: The main finding from this exposure assessment is that many workers who handle indium compounds in the electronics industry are exposed to indium levels that exceed the exposure standards for indium. Hence, it is necessary to continuously monitor the indium exposure of this workforce and take measures to reduce its exposure levels.
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http://dx.doi.org/10.1016/j.shaw.2020.11.002 | DOI Listing |
J Phys Chem Lett
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Thin film Energy Storage Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203Tamil Nadu India.
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Atom probe tomography (APT) enables three-dimensional chemical mapping with near-atomic scale resolution. However, this method requires precise sample preparation, which is typically achieved using a focused ion beam (FIB) microscope. As the ion beam induces some degree of damage to the sample, it is necessary to apply a protective layer over the region of interest (ROI).
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School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China.
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The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability.
View Article and Find Full Text PDFACS Appl Mater Interfaces
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Institute of Experimental Physics, Faculty of Mathematics Physics and Informatics, University of Gdańsk, Wita Stwosza 57, Gdańsk 80-308, Poland.
This study examines the structure and properties of NiMo-C coatings synthesized via reactive magnetron sputtering of a NiMo alloy target in an argon/acetylene atmosphere. The coating structure evolves with carbon content from nanocrystalline, through amorphous to quasi-amorphous with a nanocolumnar structure. The nanostructure consists of metallic columns perpendicular to the substrate surrounded by an amorphous carbon shell.
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