Low-Temperature Growth of AlN Films on Magnetostrictive Foils for High-Magnetoelectric-Response Thin-Film Composites.

This study reports a strong ME effect in thin-film composites consisting of nickel, iron, or cobalt foils and 550 nm thick AlN films grown by PE-ALD at a (low) temperature of 250 °C and ensuring isotropic and highly conformal coating profiles. The AlN film quality and the interface between the film and the foils are meticulously investigated by means of high-resolution transmission electron microscopy and the adhesion test. An interface (transition) layer of partially amorphous AlO/AlON with thicknesses of 10 and 20 nm, corresponding to the films grown on Ni, Fe, and Co foils, is revealed. The AlN film is found to be composed of a mixture of amorphous and nanocrystalline grains at the interface. However, its crystallinity is improved as the film grew and shows a highly preferred (002) orientation. High self-biased ME coefficients (α at a zero-bias magnetic field) of 3.3, 2.7, and 3.1 V·cm·Oe are achieved at an off-resonance frequency of 46 Hz in AlN/Ni thin-film composites with different Ni foil thicknesses of 7.5, 15, and 30 μm, respectively. In addition, magnetoelectric measurements have also been carried out in composites made of 550 nm thick films grown on 12.5 μm thick Fe and 15 μm thick Co foils. The maximum magnetoelectric coefficients of AlN/Fe and AlN/Co composites are 0.32 and 0.12 V·cm·Oe, measured at 46 Hz at a bias magnetic field () of 6 and 200 Oe, respectively. The difference of magnetoelectric transducing responses of each composite is discussed according to interface analysis. We report a maximum delivered power density of 75 nW/cm for the AlN/Ni composite with a load resistance of 200 kΩ to address potential energy harvesting and electromagnetic sensor applications.