This work investigates the effect of anhydrogen plasma treatment on gate bias stability and performance of amorphous InGaZnO thin-film transistors (TFTs) deposited by using atmospheric-pressure PECVD. The Hplasma-treated-IGZO channel has shown significant improvement in bias stress induced instability with a minuscule threshold voltage shift (Δ) of 0.31 and -0.17 V under positive gate bias stress (PBS) and negative gate bias stress (NBS), respectively. With the aid of the energy band diagram, the proposed work demonstrates the formation of negative species Oand positive species HOin the backchannel under PBS and NBS in addition to ionized oxygen vacancy (V) defects at-IGZO/ZrOinterfaces are the reason for gate bias instability which could be effectively suppressed withHplasma treatment. From the experimental result, it is observed that the electrical performance such as field-effect mobility (), on-off current ratio (/), and subthreshold swing improved significantly byHplasma treatment with passivation of interface trap density and bulk trap defects.
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