The synthesis and the electrochemical, photophysical, structural, and photoconductive properties of three new heteroleptic Pd(II) complexes with various 3',5'- disubstituted-2-(2'-pyridil) pyrroles H(N^N) as coordinated ligands are reported. The coordination of the metal center was completed by a functionalized Schiff base H(O^N) used as an ancillary ligand. The [(N^N)Pd(O^N)] complexes showed highly interesting photoconductive properties which have been correlated to their electronic and molecular structures. Theoretical density functional theory (DFT) and time-dependent DFT calculations were performed, and the results were confronted with the organization in crystalline phase, allowing to point out that the photoconductive properties are mainly a consequence of an efficient intramolecular ligand-to-metal charge transfer, combined to the proximity between the central metal and the donor moieties in the solid-state molecular stacks. The reported results confirm that these new Pd(II) complexes form a novel class of organometallic photoconductors with intrinsic characteristics suitable for molecular semiconductors applications.
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http://dx.doi.org/10.1021/acs.inorgchem.0c02991 | DOI Listing |
Polymers (Basel)
January 2025
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan.
The transient dynamics of photocurrents for poly((4-diphenylamino)benzyl acrylate) (PDAA)-based photorefractive (PR) polymers sensitized with perylene bisimide derivative N,N'-diisopropylphenyl-1,6,7,12-tetrachloroperylene-3,4,9,10-tetracarboxyl bisimide (PBI) at various composition ratios were studied. The PR polymer included (4-(diphenylamino)phenyl)methanol (TPAOH) photoconductive plasticizer and (4-(azepan-1-yl)-benzylidene) malononitrile nonlinear optical dye as well, which are needed for inducing PR effects. All the photocurrents measured at 640 nm were well simulated by a two-trapping site model considering photocarrier generation and recombination processes of the charge transfer (CT) complex between PBI and PDAA.
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December 2024
A.N. Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Leninskii Prospect 31, Moscow 119071, Russia.
Electrochemical polymerization of 3,4-ethylenedioxythiophene in the presence of water-soluble fullerene derivatives was investigated. The electronic structure, morphology, spectroelectrochemical, electrochemical properties and near-IR photoconductivity of composite films of poly(3,4-ethylenedioxythiophene) with fullerenes were studied for the first time. It was shown that fullerene with hydroxyl groups creates favorable conditions for the formation of PEDOT chains and more effectively compensates for the positive charges on the PEDOT chains.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
College of Chemistry, Beijing Normal University, Beijing 100875, China.
Designing the architecture of donor-acceptor (D-A) pairs is an effective strategy to tailor the electronic structure of conjugated macrocycles for optoelectronic devices. Herein, we present the synthesis of three D-A nanohoops ( = 7, 8, 9) containing a naphthalene diimide (NDI) unit as an acceptor and []cycloparaphenylenes ([]CPPs) moieties as donors. The D-A characteristics of were substantiated through absorption and fluorescence spectroscopic studies, electrochemical investigations, and computational analysis.
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January 2025
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW Sydney), Kensington, NSW, Australia.
A unique optoelectronic synaptic device has been developed, leveraging the negative photoconductance property of a single-crystal material system called CsCoCl. This device exhibits a simultaneous volatile resistive switching response and sensitivity to optical stimuli, positioning CsCoCl as a promising candidate for optically enhanced neuromorphic applications.
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November 2024
Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability.
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