Radical electrons tend to localize on individual molecules, resulting in an insulating (Mott-Hubbard) bandgap in the solid state. Herein, we report the crystal structure and intrinsic electronic properties of the first single crystal of a π-radical metal, tetrathiafulvalene-extended dicarboxylate (). The electrical conductivity is up to 30 000 S cm at 2 K and 2300 S cm at room temperature. Temperature dependence of resistivity obeys a power-law above > 100 K, indicating a new type of metal. X-ray crystallographic analysis clarifies the planar molecule, with a symmetric intramolecular hydrogen bond, is stacked along longitudinal (the -axis) and transverse (the -axis) directions. The π-orbitals are distributed to avoid strong local interactions. First-principles electronic calculations reveal the origin of the metallization giving rise to a wide bandwidth exceeding 1 eV near the Fermi level. demonstrates the effect of two-dimensional stacking of π-orbitals on electron delocalization, where a high carrier mobility of 31.6 cm V s (113 K) is achieved.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162741 | PMC |
http://dx.doi.org/10.1039/d0sc03521a | DOI Listing |
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