Correction for 'Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications' by Yu Lu et al., Nanoscale, 2021, 13, 7606-7612, DOI: 10.1039/D1NR00333J.
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Correction: Construction of PtSe/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications.
Nanoscale
June 2021
School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Correction for 'Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications' by Yu Lu et al., Nanoscale, 2021, 13, 7606-7612, DOI: 10.1039/D1NR00333J.
View Article and Find Full Text PDFConstruction of PtSe/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications.
Nanoscale
April 2021
School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
In this work, we present the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array comprising 1 × 10 device units operating in the short-wavelength infrared (SWIR) spectrum region. The as-fabricated heterostructures show an obvious photovoltaic effect, providing the devices with the ability to work as self-driven photodetectors. Upon 1550 nm illumination, a typical photodetector exhibits prominent photoresponse performance with the current on/off ratio, responsivity, external quantum efficiency and specific detectivity reaching 1.
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