AI Article Synopsis
- - Flash memory is widely used in various devices, and the rapid growth of technology has increased the demand for faster and more reliable memory solutions.
- - The study introduces a new type of ultrafast non-volatile flash memory using advanced materials like MoS, hBN, and multilayer graphene, achieving writing/erasing speeds of just 20 nanoseconds.
- - Key factors for this speed improvement include the optimal barrier height, gate coupling ratio, and clean interfaces, suggesting this technology could lead to the next generation of high-speed non-volatile memory.
Article Abstract
Flash memory has become a ubiquitous solid-state memory device widely used in portable digital devices, computers and enterprise applications. The development of the information age has demanded improvements in memory speed and retention performance. Here we demonstrate an ultrafast non-volatile flash memory based on MoS/hBN/multilayer graphene van der Waals heterostructures, which achieves an ultrafast writing/erasing speed of 20 ns through two-triangle-barrier modified Fowler-Nordheim tunnelling. Using detailed theoretical analysis and experimental verification, we postulate that a suitable barrier height, gate coupling ratio and clean interface are the main reasons for the breakthrough writing/erasing speed of our flash memory devices. Because of its non-volatility this ultrafast flash memory could provide the foundation for the next generation of high-speed non-volatile memory.
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| http://dx.doi.org/10.1038/s41565-021-00921-4 | DOI Listing |
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