Moiré superlattices formed by van der Waals materials can support a wide range of electronic phases, including Mott insulators, superconductors and generalized Wigner crystals. When excitons are confined by a moiré superlattice, a new class of exciton emerges, which holds promise for realizing artificial excitonic crystals and quantum optical effects. When such moiré excitons are coupled to charge carriers, correlated states may arise. However, no experimental evidence exists for charge-coupled moiré exciton states, nor have their properties been predicted by theory. Here we report the optical signatures of trions coupled to the moiré potential in tungsten diselenide/molybdenum diselenide heterobilayers. The moiré trions show multiple sharp emission lines with a complex charge-density dependence, in stark contrast to the behaviour of conventional trions. We infer distinct contributions to the trion emission from radiative decay in which the remaining carrier resides in different moiré minibands. Variation of the trion features is observed in different devices and sample areas, indicating high sensitivity to sample inhomogeneity and variability. The observation of these trion features motivates further theoretical and experimental studies of higher-order electron correlation effects in moiré superlattices.
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http://dx.doi.org/10.1038/s41586-021-03541-z | DOI Listing |
Adv Mater
December 2024
State Key Laboratory for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
Despite extensive studies on magnetic proximity effects, the fundamental excitonic properties of the 2D semiconductor-magnet heterostructures remain elusive. Here, the presence of localized excitons in MoSe/CrSBr heterostructures is unveiled, represented by a new photoluminescence emission feature, X. Our findings reveal that X originates from excitons confined by intrinsic defects in the CrSBr layer.
View Article and Find Full Text PDFPhys Rev Lett
November 2024
Institute for Theoretical Physics, Heidelberg University, Philosophenweg 16, 69120 Heidelberg, Germany.
World J Plast Surg
January 2024
Department of Oral and Maxillofacial Surgery, Faculdade Patos de Minas, Brasília, Brazil.
In the dynamic landscape of digital healthcare and facial aesthetics, there is a rising demand for tools combining precision and accessibility. This article explores an innovative approach emphasizing accuracy and accessibility in facial aesthetic procedures through individualized planning and open-source software utilization. Digital facial analysis was conducted using facial photogrammetry capturing 16 simultaneous images in 0.
View Article and Find Full Text PDFACS Nano
December 2024
Technology Innovation Center of Materials and Devices for Extreme Environment, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.
Defects in chemical vapor deposition (CVD)-grown monolayer MoS are unavoidable and provide a powerful approach to creating single-photon emitters and quantum information systems through localizing excitons. However, insight into the A trion and B/C exciton localization in monolayer MoS remains elusive. Here, we investigate defect-mediated A trion and B/C exciton localization and relaxation in CVD-grown monolayer MoS samples via transient absorption spectroscopy.
View Article and Find Full Text PDFNanophotonics
February 2024
Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warszawa, Poland.
We present femtosecond pump-probe measurements of neutral and charged exciton optical response in monolayer MoSe to resonant photoexcitation of a given exciton state in the presence of 2D electron gas. We show that creation of charged exciton (X) population in a given K, K valley requires the capture of available free carriers in the opposite valley and reduces the interaction of neutral exciton (X) with the electron Fermi sea. We also observe spectral broadening of the X transition line with the increasing X population caused by efficient scattering and excitation induced dephasing.
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