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Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator. | LitMetric

AI Article Synopsis

  • The paper addresses the issue of overestimated current levels in the subthreshold regime of source to drain tunneling in ultrascaled devices when using MS-EMC.
  • It presents two alternative solutions to improve the simulation: one modifies the tunneling probability using a new approach to the WKB approximation, and the other changes the current calculation method based on the Landauer formalism.
  • The findings indicate that the second solution, which alters the current calculation technique, is the most effective way to enhance the MS-EMC simulator's accuracy.

Article Abstract

The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way. The second corresponds to a change in the current calculation technique based on the utilization of the Landauer formalism. The results from both solutions are compared and contrasted to NEGF results from NESS. We conclude that the current computation modification constitutes the most suitable and advisable strategy to improve the MS-EMC tool.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8224779PMC
http://dx.doi.org/10.3390/mi12060601DOI Listing

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