Dynamic contact line lithography: Template-less complex Meso-patterning with polystyrene and poly(methyl methacrylate).

Hypothesis: Micro/nanopatterning on a 2D surface is apt for cutting-edge miniaturization technology, which directly or indirectly requires high-end expensive lithographic tools. The evaporative deposition at the receding contact-line of a polymer solution, termed as Dynamic Contact Line Lithography (DCLL), can be a potential inexpensive technique for template-less meso-patterning if the deposition patterns from DCLL can be predicted a priori.

Experiments: A deposition map (morphological phase diagram) from the myriads of patterns is constructed in terms of contact-line velocity and the polymer concentration. Specifically, two combinations: polystyrene (PS)/cyclohexane and poly (methyl methacrylate) (PMMA)/toluene are used to show the generic nature of the phase diagrams. The surface wettability of Si (water contact angle, CA ~15°) is tuned from CA ~35° to ~98° by patterning with DCLL.

Findings: Directed by the phase diagrams, fabrication of a complex rectangular cross-pattern of PS and PMMA micro-threads with a periodicity of ~65 μm and ~50 μm respectively on a Si surface is demonstrated to establish the robustness and potential of the DCLL and predictive phase diagram.