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Regulating the Aggregation of Unfused Non-Fullerene Acceptors via Molecular Engineering towards Efficient Polymer Solar Cells. | LitMetric

AI Article Synopsis

  • Researchers face challenges in optimizing the film morphology of polymer solar cells using unfused non-fullerene acceptors (UF-NFAs), specifically through structural design.* -
  • A new strategy was developed to control the aggregation of UF-NFAs by adjusting components in the A-D-A'-D-A framework, leading to significant analysis through UV/Vis spectrometry and X-ray scattering.* -
  • The study found that the H-aggregate-dominated compound BCIC2F achieved better blend morphology with the polymer donor PBDB-T, resulting in a remarkable power conversion efficiency of 12.4% and a very high short-circuit current density of 22.1 mA/cm².*

Article Abstract

Tuning molecular aggregation via structure design to manipulate the film morphology still remains as a challenge for polymer solar cells based on unfused non-fullerene acceptors (UF-NFAs). Herein, a strategy was developed to modulate the aggregation patterns of UF-NFAs by systematically varying the π-bridge (D) unit and central core (A') unit in A-D-A'-D-A framework (A and D refer to electron-withdrawing and electron-donating moieties, respectively). Specifically, the quantified contents of H- or J-aggregation and crystallite disorder of three UF-NFAs (BDIC2F, BCIC2F, and TCIC2F) were analyzed via UV/Vis spectrometry and grazing incidence X-ray scattering. The results showed that the H-aggregate-dominated BCIC2F with less crystallite disorder exhibited a more favorable blend morphology with polymer donor PBDB-T (poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo[1,2-c:4,5-c']dithiophene-4,8-dione)]) relative the other two UF-NFAs, resulting in improved exciton dissociation and charge tranport. Consequently, photovoltaic devices based on BCIC2F delivered a promising power conversion efficiency of 12.4 % with an exceptionally high short-circuit current density of 22.1 mA cm .

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Source
http://dx.doi.org/10.1002/cssc.202100746DOI Listing

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