We report on the development of a 250-MHz 234 nm deep-ultraviolet pulse source based on a flexible wavelength-conversion scheme. The scheme is based on a frequency-doubled optical parametric oscillator (FD-OPO) together with a cascaded frequency conversion process. We use a χ nonlinear envelope equation to guide the design of an intra-cavity OPO crystal, demonstrating a flexible broadband tunable feature and providing as high as watt-level of a frequency-doubled signal output centered at 850 nm, which is served as an input wave for the cascaded frequency conversion process. As much as 3.0 mW of an average power at 234 nm is obtained, with an rms power stability of better than 1% over 20 minutes. This deep-ultraviolet pulse laser source can be used for many applications in quantum optics and for direct laser cooling of Al ion clocks.
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http://dx.doi.org/10.1364/OE.421684 | DOI Listing |
J Chem Phys
December 2024
State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, Tianjin 300072, China.
Nanophotonics
September 2024
CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
Microsc Microanal
November 2024
Department of Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden.
In this work, samples of chromia (Cr2O3) scale have been prepared for atom probe tomography and field evaporated with deep ultraviolet laser light (258 nm wavelength). The investigated range of laser energies spans more than three orders of magnitude between 0.03 and 90 pJ.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA.
AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of AlGaN films with high Al fractions (60-87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal-organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS).
View Article and Find Full Text PDFPhys Chem Chem Phys
November 2024
University of Vienna, Faculty of Physics, VDS, VCQ, Boltzmanngasse 5, 1090 Vienna, Austria.
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